Technology: LEC™ for Flash MemoryWhen data is stored in a 30nm flash memory today, the data that is read out by the flash controller has an error rate of about 1 bit wrong in every 1000 stored. As NAND flash scaling continues, this problem is getting worse. In an effort to keep increasing flash density, NAND manufacturers continue to invest in new multi-billion-dollar fabs at smaller process nodes and increase the number of bits stored per cell. Next-generation flash will have error rates approaching 1 bit wrong in every 100.
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LEC™ error correction is the first commercial offering to harness the performance advantages of Lyric’s probability processing technology. Chips using LEC™ technology have demonstrated the ability to decode real-world flash data with raw error rates of 1% and even higher. LEC™ is assembled from Lyric’s probability gate circuits in a highly parallel architecture to realize performance wins of 30X in area and over 10X in power consumption.
Update: LEC™ Lyric error correction has been awarded Best In Show: Most Innovative Flash Memory Technology at the 2010 Flash Memory Summit. Lyric's technology was chosen from among a strong field of applicants and was recognized for its "innovation in addressing the needs for increased reliability, higher performance, along with power and cost efficiencies."